The ferroelectric and piezoelectric properties of (Hf1-xCex)O2 films on indium tin oxide/Pt/TiOx/SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

被引：0
作者：
Chaya, Nachi [1 ]
Okamoto, Kazuki [1 ]
Hirai, Koji [1 ]
Yasuoka, Shinnosuke [1 ]
Inoue, Yukari [2 ]
Yamaoka, Wakiko [2 ]
Funakubo, Hiroshi [1 ]
机构：
[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Yokohama, Kanagawa 2268502, Japan
[2] TDK Corp, Tech Ctr, Ichikawa, Chiba 2728558, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 04期
基金：
日本学术振兴会;
关键词：
no-heating processes; ferroelectric HfO2-based films; thick films; RF magnetron sputtering method; THIN-FILMS; CRYSTAL-STRUCTURE;
D O I：
10.35848/1347-4065/ad3a71
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1-xCex)O-2 films deposited without substrate heating was investigated. (Hf1-xCex)O-2 films with various x values (x = 0.07-0.27) and thickness (150-880 nm) were deposited via RF magnetron sputtering on indium tin oxide (ITO)/Pt/TiOx/SiO2/(100)Si substrates. The crystalline phases of the films were observed by X-ray diffraction. The measurements of electrical properties revealed ferroelectric phases in the x range of 0.11-0.21. The film with x = 0.16 exhibited the maximum remanent polarization (Pr) of 15 mu C cm(-2), as well as the highest effective piezoelectric coefficient. In addition, the ferroelectric and structural properties remained almost unchanged with increasing film thickness. Therefore, the no-heating deposition of ferroelectric (Hf1-xCex)O-2 films and their phase stability with respect to thickness were demonstrated in this study. This work provides a pathway for the deposition of ferroelectric (Hf1-xCex)O-2 films on flexible, wearable sensors. (c) 2024 The Japan Society of Applied Physics
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页数：7
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共 36 条
[21]   Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications [J].
Mueller, J. ;
Boescke, T. S. ;
Braeuhaus, D. ;
Schroeder, U. ;
Boettger, U. ;
Sundqvist, J. ;
Kuecher, P. ;
Mikolajick, T. ;
Frey, L. .
APPLIED PHYSICS LETTERS, 2011, 99 (11)
[22]   Ferroelectricity in Simple Binary ZrO2 and HfO2 [J].
Mueller, Johannes ;
Boescke, Tim S. ;
Schroeder, Uwe ;
Mueller, Stefan ;
Braeuhaus, Dennis ;
Boettger, Ulrich ;
Frey, Lothar ;
Mikolajick, Thomas .
NANO LETTERS, 2012, 12 (08) :4318-4323
[23]   Reliability Characteristics of Ferroelectric Si: HfO2 Thin Films for Memory Applications [J].
Mueller, Stefan ;
Mueller, Johannes ;
Schroeder, Uwe ;
Mikolajick, Thomas .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (01) :93-97
[24]   Incipient Ferroelectricity in Al-Doped HfO2 Thin Films [J].
Mueller, Stefan ;
Mueller, Johannes ;
Singh, Aarti ;
Riedel, Stefan ;
Sundqvist, Jonas ;
Schroeder, Uwe ;
Mikolajick, Thomas .
ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (11) :2412-2417
[25]   Thin-film PZT lateral actuators with extended stroke [J].
Oldham, Kenn R. ;
Pulskamp, Jeffrey S. ;
Polcawich, Ronald G. ;
Dubey, Madan .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2008, 17 (04) :890-899
[26]   Review and perspective on ferroelectric HfO2-based thin films for memory applications [J].
Park, Min Hyuk ;
Lee, Young Hwan ;
Mikolajick, Thomas ;
Schroeder, Uwe ;
Hwang, Cheol Seong .
MRS COMMUNICATIONS, 2018, 8 (03) :795-808
[27]   Piezoelectric film response studied with finite element method [J].
Sato, Harumichi ;
Akedo, Jun .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (12) :3715-3720
[28]   Toward Thick Piezoelectric HfO2-Based Films [J].
Schenk, Tony ;
Godard, Nicolas ;
Mahjoub, Aymen ;
Girod, Stephanie ;
Matavz, Aleksander ;
Bobnar, Vid ;
Defay, Emmanuel ;
Glinsek, Sebastjan .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2020, 14 (03)
[29]   No-Heating Deposition of 1-μm-Thick Y-Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method [J].
Shimura, Reijiro ;
Mimura, Takanori ;
Tateyama, Akinori ;
Shiraishi, Takahisa ;
Shimizu, Takao ;
Yamada, Tomoaki ;
Tanaka, Yoshitomo ;
Inoue, Yukari ;
Funakubo, Hiroshi .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2022, 16 (10)
[30]   Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiOx/SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties [J].
Shimura, Reijiro ;
Mimura, Takanori ;
Tateyama, Akinori ;
Shimizu, Takao ;
Yamada, Tomoaki ;
Tanaka, Yoshitomo ;
Inoue, Yukari ;
Funakubo, Hiroshi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (03)
1234