The ferroelectric and piezoelectric properties of (Hf1-xCex)O2 films on indium tin oxide/Pt/TiOx/SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

被引：0

作者：

Chaya, Nachi ^{[1
]}

Okamoto, Kazuki ^{[1
]}

Hirai, Koji ^{[1
]}

Yasuoka, Shinnosuke ^{[1
]}

Inoue, Yukari ^{[2
]}

Yamaoka, Wakiko ^{[2
]}

Funakubo, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Yokohama, Kanagawa 2268502, Japan

[2] TDK Corp, Tech Ctr, Ichikawa, Chiba 2728558, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 04期

基金：

日本学术振兴会;

关键词：

no-heating processes; ferroelectric HfO2-based films; thick films; RF magnetron sputtering method; THIN-FILMS; CRYSTAL-STRUCTURE;

D O I：

10.35848/1347-4065/ad3a71

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of composition and film thickness on the ferroelectric and piezoelectric properties of (Hf1-xCex)O-2 films deposited without substrate heating was investigated. (Hf1-xCex)O-2 films with various x values (x = 0.07-0.27) and thickness (150-880 nm) were deposited via RF magnetron sputtering on indium tin oxide (ITO)/Pt/TiOx/SiO2/(100)Si substrates. The crystalline phases of the films were observed by X-ray diffraction. The measurements of electrical properties revealed ferroelectric phases in the x range of 0.11-0.21. The film with x = 0.16 exhibited the maximum remanent polarization (Pr) of 15 mu C cm(-2), as well as the highest effective piezoelectric coefficient. In addition, the ferroelectric and structural properties remained almost unchanged with increasing film thickness. Therefore, the no-heating deposition of ferroelectric (Hf1-xCex)O-2 films and their phase stability with respect to thickness were demonstrated in this study. This work provides a pathway for the deposition of ferroelectric (Hf1-xCex)O-2 films on flexible, wearable sensors. (c) 2024 The Japan Society of Applied Physics

引用

页数：7

共 36 条

[1] High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty [J].

Ali, T. ;

Polakowski, P. ;

Riedel, S. ;

Buettner, T. ;

Kaempfe, T. ;

Rudolph, M. ;

Paetzold, B. ;

Seidel, K. ;

Loehr, D. ;

Hoffmann, R. ;

Czernohorsky, M. ;

Kuehnel, K. ;

Steinke, P. ;

Calvo, J. ;

Zimmermann, K. ;

Mueller, J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (09) :3769-3774

[2] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[3] Characterization of Nb-doped Pb(Zr,Ti)O3 films deposited on stainless steel and silicon substrates by RF-magnetron sputtering for MEMS applications [J].

Fujii, Takamichi ;

Hishinuma, Yoshikazu ;

Mita, Tsuyoshi ;

Naono, Takayuki .

SENSORS AND ACTUATORS A-PHYSICAL, 2010, 163 (01) :220-225

[4] Comparison study of ITO thin films deposited by sputtering at room temperature onto polymer and glass substrates [J].

Guillén, C ;

Herrero, J .

THIN SOLID FILMS, 2005, 480 :129-132

[5] Composition dependence of ferroelectric properties in (111)-oriented epitaxial HfO2-CeO2 solid solution films [J].

Hirai, Koji ;

Shiraishi, Takahisa ;

Yamaoka, Wakiko ;

Tsurumaru, Risako ;

Inoue, Yukari ;

Funakubo, Hiroshi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SN)

[6] HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory [J].

Huang, Fei ;

Wang, Yan ;

Liang, Xiao ;

Qin, Jun ;

Zhang, Yan ;

Yuan, Xiufang ;

Wang, Zhuo ;

Peng, Bo ;

Deng, Longjiang ;

Liu, Qi ;

Bi, Lei ;

Liu, Ming .

IEEE ELECTRON DEVICE LETTERS, 2017, 38 (03) :330-333

[7] Development of serial-connection piezoelectric pumps [J].

Kan, Junwu ;

Tang, Kehong ;

Liu, Guojun ;

Zhu, Guoren ;

Shao, Chenghui .

SENSORS AND ACTUATORS A-PHYSICAL, 2008, 144 (02) :321-327

[8] Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices [J].

Katayama, Kiliha ;

Shimizu, Takao ;

Sakata, Osami ;

Shiraishi, Takahisa ;

Nakamura, Syogo ;

Kiguchi, Takanori ;

Akama, Akihiro ;

Konno, Toyohiko J. ;

Uchida, Hiroshi ;

Funakubo, Hiroshi .

APPLIED PHYSICS LETTERS, 2016, 109 (11)

[9] High-Performance and High-Endurance HfO2-Based Ferroelectric Field-Effect Transistor Memory with a Spherical Recess Channel [J].

Kim, Taeho ;

Hwang, Junghyeon ;

Kim, Giuk ;

Jung, Minhyun ;

Jeon, Sanghun .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (05)

[10]

Kirbach S., 2018, Proc. IEEE Conf. Nanotechnol, V18

← 1 2 3 4 →