Effect of bias voltages and interlayer design on microstructure, mechanical properties, and adhesion performance of AlCrSiN coatings deposited using HiPIMS

被引:4
|
作者
Tang, Jian-Fu [1 ]
Chen, I-Hong [2 ]
Lu, Bo-Ruei [2 ]
Chang, Chi -Lung [2 ,3 ]
机构
[1] Lunghwa Univ Sci & Technol, Dept Elect Engn, Taoyuan, Taiwan
[2] Ming Chi Univ Technol, Dept Mat Engn, Taipei, Taiwan
[3] Ming Chi Univ Technol, Ctr Plasma & Thin Film Technol, Taipei, Taiwan
来源
SURFACE & COATINGS TECHNOLOGY | 2024年 / 480卷
关键词
HiPIMS; AlCrSiN; Bias voltage; Interlayer; TRIBOLOGICAL PROPERTIES; NITRIDE COATINGS; HARD COATINGS; MAGNETRON; TOOLS; FILMS; AL; MULTILAYERS; BEHAVIOR; WEAR;
D O I
10.1016/j.surfcoat.2024.130618
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study fabricated AlCrSiN coatings from six alloy targets (Four Al7Cr3 targets and two Cr9Si1 targets) using high -power impulse magnetron sputtering (HiPIMS) with a focus on the effects of substrate bias voltage (-30 to -90 V) on deposition rate, microstructure, crystal orientation, residual stress, and mechanical properties. Electron Probe Microanalysis (EPMA) and X-ray Diffraction (XRD) results revealed that variations in bias voltage had little impact on the element composition or crystal structure (FCC) of AlCrSiN coatings; however, under high bias voltage (exceeding -60 V), the preferred orientation shifted from the (111) plane to the (220). Increasing the bias voltage from -30 to -90 V was shown to reduce the deposition rate (from 42.2 to 37.6 nm/min) and the thickness of the AlCrSiN coating (from 2.9 to 2.6 mu m). It was also shown to increase the hardness (from 2147 to 3658 HV) and residual stress (from -0.01 to -0.59 GPa) by reducing the grain size and allowing the formation of a denser structure. Various interlayer designs (AlCr/AlCrxNy/AlCrN, CrSi/AlCrxNy/AlCrN, AlCr/CrSixNy/CrSiN, CrSi/CrSixNy/CrSiN) were assessed in terms of adhesion strength between the AlCrSiN and substrate. Under the same AlCrSiN deposition condition, with the bias voltage set to -60 V, the highest adhesion strength (from 32.28 to 45.81 N) was achieved using a CrSi/CrSixNy/CrSiN interlayer structure.
引用
收藏
页数:8
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