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Thickness-dependent atomic structures of two-dimensional few-layer ZnO: A density functional theory study
被引:2
作者:
Han, Dong
[1
]
Li, Xian-Bin
[2
]
Chen, Nian-Ke
[2
]
Wang, Dan
[3
]
Xie, Sheng-Yi
[4
]
Chen, Xue-Jiao
[5
,6
]
Shen, De-Zhen
[1
]
机构:
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[3] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[4] Hunan Univ, Sch Phys & Elect, Changsha 410082, Peoples R China
[5] Chinese Acad Sci, CAS Key Lab Magnet Mat Devices, Ningbo 315201, Peoples R China
[6] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & ApplicationTech, Ningbo 315201, Peoples R China
基金:
中国国家自然科学基金;
关键词:
TOTAL-ENERGY CALCULATIONS;
PLANE-WAVE;
NANOSTRUCTURES;
CRYSTAL;
GROWTH;
VISUALIZATION;
COHP;
D O I:
10.1103/PhysRevB.109.014105
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The thickness-dependent atomic structures of two-dimensional (2D) few-layer (FL) ZnO are systematically investigated by the first-principles calculations. It is found that the structural transformation between thinner FL ZnO with graphitic structure (FL gZnO) and thicker FL ZnO with wurtzite structure (FL wZnO) takes place at the critical thickness of 9-12 Zn-O atomic layers. At the thickness of 9-12 layers, both graphitic and wurtzite structures can coexist at room temperature. In FL gZnO, the interlayer interaction is a long-range Coulomb interaction, and the charge population of Zn and O inside does not change during the structural transformation. Moreover, we demonstrate that the structural transformation of FL ZnO originates from the competition between the high energy of the O 2pz orbital in the graphitic structure and the polar-surface-induced dipole energy in the wurtzite structure. Our microscopic understanding guides a clear direction of regulating the atomic structure of FL ZnO, further optimizing its electronic properties, which benefits developing function-advanced 2D stacked devices.
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页数:6
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