The First Principles Investigations of the Thermoelectric Properties of GaN with p-and n-Type Doping

被引：2

作者：

吴文涛

吴克琛

马祖驹

洒荣建

韦永勤

李巧红

机构：

[1] StateKeyLaboratoryofStructuralChemistry,FujianInstituteofResearchontheStructureofMatter,ChineseAcademyofSciences

来源：

结构化学 | 2012年 / 31卷 / 11期

关键词：

thermoelectric properties; gallium nitride; first principles; Boltzmann theory;

D O I：

暂无

中图分类号：

O614.371 [];

学科分类号：

070301 ; 081704 ;

摘要：

We investigate the thermoelectric properties of GaN with p-and n-type doping by the first principles calculation and the semi-classical Boltzmann theory. We find that the power factors (S2σof p-type GaN (-3500 W/mK2) is about twice that of the n-type (-1750 W/mK2), which indicates the thermoelectric properties of p-type GaN would be better. Thermal conductivity of GaN crystal decreases rapidly as the temperature increases, but it is still too large for thermoelectric applications. The figure of merit (ZT) estimated at 1500 K is 0.134 for p-type GaN crystal and 0.062 for the n-type.

引用

页码：1613 / 1617

页数：5

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