Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

被引：0
|
作者：
唐欣月 [1 ]
高红 [1 ]
武立立 [2 ]
温静 [1 ]
潘思明 [1 ]
刘欣 [1 ]
张喜田 [1 ]
机构：
[1] Key Laboratory for Photonic and Electronic Bandgap Materials,Ministry of Education,School of Physics and Electronic Engineering,Harbin Normal University
[2] Center for Engineering Training and Basic Experimentation,Heilongjiang University of Science and Technology
来源：
ChinesePhysicsB | 2015年 / 24卷 / 02期
基金：
中国国家自然科学基金;
关键词：
In2O3（ZnO）m; superlattice; electrical properties;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
One-dimensional(ID) InO(ZnO)superlattice nanobelts are synthesized by a chemical vapor deposition method.The formation of the InO(ZnO)superlattice is verified by the high-resolution transmission electron microscopy images.The typical zigzag boundaries could be clearly observed.An additional peak at 614 cmis found in the Raman spectrum,which may correspond to the superlattice structure.The study about the electrical transport properties reveals that the InO(ZnO)nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition,which are different from the Ohmic behaviors of the In-doped ZnO nanobelts.The photoelectrical measurements show the differences in the photocurrent property between them,and their transport mechanisms are also discussed.
引用
收藏
页码：398 / 402
页数：5
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