Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

One-dimensional(ID) InO(ZnO)superlattice nanobelts are synthesized by a chemical vapor deposition method.The formation of the InO(ZnO)superlattice is verified by the high-resolution transmission electron microscopy images.The typical zigzag boundaries could be clearly observed.An additional peak at 614 cmis found in the Raman spectrum,which may correspond to the superlattice structure.The study about the electrical transport properties reveals that the InO(ZnO)nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition,which are different from the Ohmic behaviors of the In-doped ZnO nanobelts.The photoelectrical measurements show the differences in the photocurrent property between them,and their transport mechanisms are also discussed.