Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

被引：0

作者：

Xiaoshan Du ^{[1
,2
]}

Shu Wang ^{[2
]}

Qiaoxuan Zhang ^{[3
]}

Shengyao Chen ^{[2
,4
]}

Fengyou Yang ^{[2
]}

Zhenzhou Liu ^{[2
]}

Zhengwei Fan ^{[2
]}

Lijun Ma ^{[2
]}

Lei Wang ^{[5
]}

Lena Du ^{[6
]}

Zhongchang Wang ^{[7
]}

Cong Wang ^{[8
]}

Bing Chen ^{[1
]}

Qian Liu ^{[2
,4
]}

机构：

[1] College of Electronic and Information Engineering, Shandong University of Science and Technology

[2] National Center for Nanoscience and Technology & University of Chinese Academy of Sciences

[3] Hebei University of Water Resources and Electric Engineering Electrical Automation Department

[4] The MOE Key Laboratory of Weak-Light Nonlinear Photonics and International Sino-Slovenian Join Re-search Center on Liquid Crystal Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University

[5] College of Mathematics and Physics, Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory, Qingdao University of Science and Technology

[6] Department of Physics, Capital Normal University

[7] Department of Advanced Materials and Computing, International Iberian Nanotechnology Laboratory (INL)

[8] College of Mathematics and Physics, Beijing University of Chemical Technology

来源：

JournalofSemiconductors | 2024年 / 45卷 / 07期

基金：

欧盟第七框架计划;

关键词：

D O I：

暂无

中图分类号：

TN60 [一般性问题]; TB34 [功能材料];

学科分类号：

080903 ; 080501 ;

摘要：

Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage,in-memory computing, synaptic applications, etc. In recent years, two-dimensional（2D） materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS2 device（on/off ratio ～100）, for the first time, from absent to present using laser-modulation to few-layer defect-free MoS2（about 10 layers）, and its retention time in both high resistance state and low resistance state can reach 2 × 10～4 s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.

引用

页码：88 / 95

页数：8

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