Polarization sensitive photodetector based on quasi-1D ZrSe

被引：0
|
作者：
Xingang Wang [1 ]
Tao Xiong [2 ]
Kaiyao Xin [2 ,3 ]
Juehan Yang [2 ]
Yueyang Liu [2 ]
Zeping Zhao [1 ]
Jianguo Liu [1 ]
Zhongming Wei [2 ,3 ]
机构：
[1] The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
[2] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
[3] Sino-Danish Center for Education and Research, Sino-Danish College University of Chinese Academy of
来源：
Journal of Semiconductors | 2022年 / 10期
关键词：
D O I：
暂无
中图分类号：
TN15 [光电器件、光电管];
学科分类号：
0803 ;
摘要：
The in-plane anisotropy of transition metal trichalcogenides（MX3） has a significant impact on the molding of materials and MX3 is a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional（1D） semiconductors, ZrSe3, are systematically investigated through experiments and theoretical studies. The ZrSe3-based photodetector shows impressive wide spectral response from ultraviolet（UV） to near infrared（NIR） and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W-1 and detectivity of ～106 at 532nm. Moreover, the dichroic ratio of ZrSe3-based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSe3 has potential in optoelectronic applications and polarization detectors.
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页码：43 / 53
页数：11
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