Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

被引：0

作者：

陆广宝 ^{[1
,2
]}

刘俊 ^{[1
,2
]}

张传国 ^{[1
]}

高扬 ^{[1
,2
]}

李永钢 ^{[1
,2
]}

机构：

[1] Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences

[2] University of Science and Technology of China

来源：

Chinese Physics B | 2023年 / 32卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The total ionizing dose(TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson’s equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal–oxide–semiconductor(MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO2interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.

引用

页码：137 / 146

页数：10

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