SBT-memristor-based crossbar memory circuit

被引：1
作者：
郭梅 [1 ]
刘任远 [1 ]
窦明龙 [1 ]
窦刚 [1 ]
机构：
[1] College of Electrical Engineering and Automation, Shandong University of Science and Technology
来源：
Chinese Physics B | 2021年 / 06期
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TN60 [一般性问题];
学科分类号：
080903 ;
摘要：
Implementing memory using nonvolatile, low power, and nano-structure memristors has elicited widespread interest.In this paper, the SPICE model of SrBaTiO(SBT)-memristor was established and the corresponding characteristic was analyzed. Based on an SBT-memristor, the process of writing, reading, and rewriting of the binary and multi-value memory circuit was analyzed. Moreover, we verified the SBT-memristor-based 4×4 crossbar binary and multi-value memory circuits through comprehensive simulations, and analyzed the sneak-path current and memory density. Finally, we apply the 8×8 crossbar multi-value memory circuits to the images memory.
引用
收藏
页码：764 / 772
页数：9
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