Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response

被引:0
作者
李亚超 [1 ,2 ]
葛超 [1 ,2 ]
汪鹏 [1 ,2 ]
刘爽 [1 ,2 ]
麻晓冉 [1 ,2 ]
王冰 [1 ,2 ]
宋海英 [1 ,2 ]
刘世炳 [1 ,2 ]
机构
[1] Strong-field and Ultrafast Photonics Laboratory, Key Laboratory of Trans-scale Laser Manufacturing Technology, Ministry of Education,Faculty of Materials and Manufacturing, Beijing University of Technology
[2] Strong-field and Ultrafast Photonics Laboratory, Beijing Engineering Research Center of Laser Technology, Faculty of Materials and Manufacturing,Beijing University of Technology
关键词
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中图分类号
O411 [物理学的数学方法];
学科分类号
0701 ;
摘要
The transient dynamics of anisotropic properties of Ga As was systematically studied by polarization-dependent ultrafast time-resolved transient absorption. Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes, suggesting an extraordinary resonance absorption of photon–phonon coupling(PPC) with intrinsic anisotropic characteristic in carrier relaxation, regardless of the concrete crystallinity and orientation of GaAs sample. The results, delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics, also proved the paramount importance of interaction between polarized laser and semiconductor.
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页码:732 / 739
页数:8
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