Research progress and challenges of two dimensional MoS2 field effect transistors

This review paper gives an outline of the recent research progress and challenges of 2D TMDs material MoSbased device, that leads to an interesting path towards approaching the electronic applications due to its sizeable band gap. This review presents the improvement of MoSmaterial as an alternate to a silicon channel in a transistor with its excellent energy band gap, thermal conductivity, and exclusive physical properties that are expected to draw attention to focusing on semiconducting devices for most futuristic applications. We discuss the band structure of MoSfor a different number of layers with its structure, and various synthesis techniques of the MoSlayer are also reviewed. The MoSbased field effect transistor has attracted a great deal of attention due to its excellent properties such as mobility, on/off current ratio, and maximum on-current of the devices. The transition of mobility as a function of temperature and thickness dependence are also discussed. However, the mobility of MoSmaterial is large in bulk form and lower in monolayer form. The use of a high-k gate dielectric in MoSFET is used to enhance the mobility of the device. Different metal contact engineering and different doping techniques were deployed to achieve low contact resistance. This review paper focuses on various aspects of layered TMDs material MoSbased field effect transistors.