Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP附视频

<正>The chemical mechanical polishing/planarization(CMP) performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate(DR) and the polish rate(PR) show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors(Benzotriazole,BTA).The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.