Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP附视频

被引：0

作者：

王辰伟 ^{[1
]}

刘玉岭 ^{[1
]}

田建颖 ^{[2
]}

牛新环 ^{[1
]}

郑伟艳 ^{[1
]}

岳红维 ^{[1
]}

机构：

[1] Institute of Microelectronics,Hebei University of Technology

[2] Market Information Department of CSPC Zhongqi Pharmaceutical Technology(Shijiazhuang)

来源：

Journal of Semiconductors | 2012年 / 11期

关键词：

D O I：

暂无

中图分类号：

TN305.2 [表面处理];

学科分类号：

摘要：

<正>The chemical mechanical polishing/planarization(CMP) performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate(DR) and the polish rate(PR) show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors(Benzotriazole,BTA).The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.

引用

页码：134 / 138

页数：5