Implementation of slow and smooth etching of GaN by inductively coupled plasma

被引：0

作者：

Xilin Li ^{[1
,2
,3
]}

Ping Ma ^{[1
,2
,3
]}

Xiaoli Ji ^{[1
,2
,3
]}

Tongbo Wei ^{[1
,2
,3
]}

Xiaoyu Tan ^{[1
,2
,3
]}

Junxi Wang ^{[1
,2
,3
]}

Jinmin Li ^{[1
,2
,3
]}

机构：

[1] Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

[3] Beijing Engineer Research Center for the rd Generation Semiconductor Materials and

来源：

Journal of Semiconductors | 2018年 / 39卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TN305.7 [光刻、掩膜];

学科分类号：

摘要：

Slow and smooth etching of gallium nitride（GaN） by BCl3/Cl2-based inductively coupled plasma（ICP）is investigated in this paper. The effects of etch parameters, including ICP power, radio frequency（RF） power, the flow rate of Cl2 and BCl3, on GaN etch rate and etch surface roughness RMS are discussed. A new model is suggested to explain the impact mechanism of the BCl3 flow rate on etch surface roughness. An optimized etch result of a slow and smooth etch surface was obtained; the etch rate and RMS were 0.36 ?/s and 0.9 nm, respectively.

引用

页码：23 / 28

页数：6

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