High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

被引：0

作者：

Chengzhang Han ^{[1
,2
]}

Da Chen ^{[2
]}

Yaozhong Zhang ^{[1
]}

Dong Xu ^{[1
]}

Yijian Liu ^{[1
,2
]}

Eric SiuWai Kong ^{[1
]}

Yafei Zhang ^{[1
]}

机构：

[1] Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University

[2] Department of Applied Physics, College of Science, Shandong University of Science and

来源：

Nano-Micro Letters | 2012年 / 4卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TQ133.1 [铝的无机化合物]; TB383.2 [];

学科分类号：

摘要：

Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.

引用

页码：40 / 44

页数：5

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