High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

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作者
Chengzhang Han [1 ,2 ]
Da Chen [2 ]
Yaozhong Zhang [1 ]
Dong Xu [1 ]
Yijian Liu [1 ,2 ]
Eric SiuWai Kong [1 ]
Yafei Zhang [1 ]
机构
[1] Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University
[2] Department of Applied Physics, College of Science, Shandong University of Science and
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TQ133.1 [铝的无机化合物]; TB383.2 [];
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摘要
Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.
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页码:40 / 44
页数:5
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