IC design of low power, wide tuning range VCO in 90 nm CMOS technology

被引:0
|
作者
李竹 [1 ,2 ]
王志功 [1 ]
李智群 [1 ]
李芹 [1 ]
刘法恩 [1 ]
机构
[1] Institute of RF- & OE-ICs Southeast University
[2] Nanjing University of Science and
关键词
D O I
暂无
中图分类号
TN402 [设计];
学科分类号
摘要
A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current.
引用
收藏
页码:137 / 142
页数:6
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