Influence of incident angle on the defect mode of locally doped photonic crystal

被引:0
|
作者
王瑾 [1 ]
温廷敦 [1 ]
许丽萍 [1 ]
刘祖凡 [2 ]
机构
[1] Department of Physics, North University of China
[2] China Aviation Lithium Battery Co., Ltd
基金
中国国家自然科学基金;
关键词
photonic crystal; defect mode; incident angle; locally doped; transfer matrix method;
D O I
暂无
中图分类号
O734 [晶体的光学性质];
学科分类号
0803 ;
摘要
By means of a transfer matrix method,this paper deduces the transmittance calculation equation of light travellinginlocallydoped(includingonedefectlayer)mirrorheterostructure(ABCCBA)PD(ABCCBA)Qphotonic crystals.In the cases of defect layers being either introduced or not introduced,an ORIGIN simulation shows the influence of incident angle change on the number of photon band gap,bandwidth and defect mode numbers.Studies indicate that when such photonic crystals have 8 mirror cycles and the thickness of defect layer D meets nD dD D0=2 or nD dD D40,the photonic crystal defect mode transmission peak changes significantly.Also,with the change of incident angle,the number of defect mode transmission peaks changes.By altering incident angle and defect layer thickness,we can get photon band gaps and defect mode transmission peaks at different frequency domains and different relative angular frequencies.This provides theoretical reference for achieving light wave multi-channel filtering and tunable filtering.
引用
收藏
页码:15 / 18
页数:4
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