A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

被引：0

作者：

代盼 ^{[1
,2
]}

陆书龙 ^{[1
]}

季莲 ^{[1
]}

何巍 ^{[1
]}

边历峰 ^{[1
]}

杨辉 ^{[1
]}

有持佑之 ^{[3
]}

吉田浩 ^{[3
]}

内田史朗 ^{[3
]}

池田昌夫 ^{[3
]}

机构：

[1] Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

[3] Advanced Material Laboratories,Sony Corporation,Atsugi Tec

来源：

Journal of Semiconductors | 2013年 / 34卷 / 10期

关键词：

D O I：

暂无

中图分类号：

TM914.4 [太阳能电池];

学科分类号：

080502 ;

摘要：

We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecularbeamepitaxy(MBE).The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction,with an interconnected GaAs tunnel junction.A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell,while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell,respectively.The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed.It is demonstrated that the MBE-grown phosphide-containing Ⅲ–V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.

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页码：66 / 69

页数：4

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