A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

被引：0

作者：

代盼 ^{[1
,2
]}

陆书龙 ^{[1
]}

季莲 ^{[1
]}

何巍 ^{[1
]}

边历峰 ^{[1
]}

杨辉 ^{[1
]}

有持佑之 ^{[3
]}

吉田浩 ^{[3
]}

内田史朗 ^{[3
]}

池田昌夫 ^{[3
]}

机构：

[1] Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

[3] Advanced Material Laboratories,Sony Corporation,Atsugi

来源：

Journal of Semiconductors | 2013年 / 34卷 / 10期

关键词：

D O I：

暂无

中图分类号：

TM914.4 [太阳能电池];

学科分类号：

摘要：

We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecularbeamepitaxy(MBE).The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction,with an interconnected GaAs tunnel junction.A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell,while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell,respectively.The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed.It is demonstrated that the MBE-grown phosphide-containing Ⅲ–V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.

引用

页码：66 / 69

页数：4

共 50 条

[1] A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy
代盼
陆书龙
季莲
何巍
边历峰
杨辉
有持佑之
吉田浩
内田史朗
池田昌夫
Journal of Semiconductors, 2013, (10) : 66 - 69
[2] A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy
Dai Pan
Lu Shulong
Ji Lian
He Wei
Bian Lifeng
Yang Hui
Arimochi, M.
Yoshida, H.
Uchida, S.
Ikeda, M.
JOURNAL OF SEMICONDUCTORS, 2013, 34 (10)
[3] GaInP/GaAs cascade solar cells grown by molecular beam epitaxy
Lammasniemi, J
Kazantsev, AB
Jaakkola, R
Toivonen, M
Jalonen, M
Aho, R
Pessa, M
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 823 - 826
[4] Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy
Masuda, Taizo
Tomasulo, Stephanie
Lang, Jordan R.
Lee, Minjoo Larry
JOURNAL OF APPLIED PHYSICS, 2015, 117 (09)
[5] Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications
Li, Brian
Sun, Yukun
Hool, Ryan D.
Lee, Minjoo Larry
JOURNAL OF APPLIED PHYSICS, 2023, 134 (06)
[6] Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy
Dai, P.
Lu, S. L.
Arimochi, M.
Uchida, S.
Watanabe, T.
Luo, X. D.
Yang, H.
SOLID STATE COMMUNICATIONS, 2014, 200 : 9 - 13
[7] Molecular beam epitaxy grown GaInP top and GaAs tunnel diodes for tandem applications
Lammasniemi, J
Tappura, K
Jaakkola, R
Kazantsev, A
Rakkennus, K
Uusimaa, P
Pessa, M
CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 97 - 100
[8] AlGaSb Based Solar Cells Grown on GaAs by Molecular Beam Epitaxy
Vadiee, Ehsan
Zhang, Chaomin
Faleev, Nikolai N.
Addamane, Sadhvikas
Wang, Shuo
Ponce, Fernando A.
Balakrishnan, Ganesh
Honsberg, Christiana B.
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 2313 - 2316
[9] High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
Shulong Lu
Lian Ji
Wei He
Pan Dai
Hui Yang
Masayuki Arimochi
Hiroshi Yoshida
Shiro Uchida
Masao Ikeda
Nanoscale Research Letters, 6
[10] High-efficiency GaAs and GaInP solar cells grown by all solid-state Molecular-Beam-Epitaxy
Lu, Shulong
Ji, Lian
He, Wei
Dai, Pan
Yang, Hui
Arimochi, Masayuki
Yoshida, Hiroshi
Uchida, Shiro
Ikeda, Masao
NANOSCALE RESEARCH LETTERS, 2011, 6 : 1 - 4

← 1 2 3 4 5 →