A Cu/ZnO Nanowire/Cu Resistive Switching Device

被引：0

作者：

Lijie Li ^{[1
,2
]}

Yan Zhang ^{[3
,4
]}

Zhengjun Chew ^{[1
]}

机构：

[1] Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University

[2] Wuhan University of Technology

[3] Institute of Theoretical Physics, Lanzhou University

[4] Beijing Institute of Nanoengergy and Nanosystem, Chinese Academy of Science

来源：

Nano-Micro Letters | 2013年 / 5卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM564 [各种开关]; TB383.1 [];

学科分类号：

080801 ; 070205 ; 080501 ; 1406 ;

摘要：

A new device has been realized using flip-chip joining two printed circuit boards(PCBs) on which zinc oxide(ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I-V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source.

引用

页码：159 / 162

页数：4