30 nm T-gate enhancement-mode InAIN/AIN/GaN HEMT on SiC substrates for future high power RF applications

The DC and RF performance of 30 nm gate length enhancement mode(E-mode) InAlN/AlN/GaN high electron mobility transistor(HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool.The proposed device has the features of a recessed T-gate structure,InGaN back barrier and Al2O3 passivated device surface.The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm,transconductance gm of 1050 mS/mm,current gain cut-off frequency ft of 350 GHz and power gain cut-off frequency fmax of 340 GHz.At room temperature the measured carrier mobility(μ),sheet charge carrier density(ns) and breakdown voltage are 1580 cm2/(V·s),1.9 × 1013 cm-2,and 10.7 V respectively.The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.