Quantum cascade lasers: from sketch to mainstream in the mid and far infrared

被引:0
作者
Ning Zhuo
Fengqi Liu
Zhanguo Wang
机构
[1] KeyLaboratoryofSemiconductorMaterialsScience,InstituteofSemiconductors,ChineseAcademyofSciences
关键词
D O I
暂无
中图分类号
TN248.4 [半导体激光器];
学科分类号
0803 ; 080401 ; 080901 ;
摘要
<正>Electrically-pumped semiconductor lasers based on monolithic chip configuration possess plenty of advantages such as small volume, light weight, long lifetime and stable performance. Nevertheless this type of lasers rely on the interband transition, which sets the bounds for emission wavelength typically below4μm,and state of the art performance has been attained below 3μm. Attempts to employ small bandgap meterials like antimonide or lead salts ended with poor performance mainly due to imperfect crystal quality and severe Auger recom-
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页码:6 / 11
页数:6
相关论文
共 3 条
[1]  
14 μm quantum cascade lasers based on diagonal transition and nonresonant extraction.[J].SHOUZHU NIU;JUNQI LIU;FENGMIN CHENG;HUAN WANG;JINCHUAN ZHANG;NING ZHUO;SHENQIANG ZHAI;LIJUN WANG;SHUMAN LIU;FENGQI LIU;ZHANGUO WANG;XIAOHUA WANG;ZHIPENG WEI;.Photonics Research.2019, 11
[2]  
High temperature operation of far infrared (λ≈20μm)InAs/AlSb quantum cascade lasers with dielectric waveguide..Bahriz M;Lollia G;Baranov A N; et al;.Opt Express.2015, 02
[3]  
Terahertz quantum-cascade-laser source based on intracavity difference-frequency generation..Mikhail A. Belkin;Federico Capasso;Alexey Belyanin;Deborah L. Sivco;Alfred Y. Cho;Douglas C. Oakley;Christopher J. Vineis;George W. Turner;.Nature Photonics.2007,