SHARP 1.54 MU-M LUMINESCENCE FROM POROUS ERBIUM IMPLANTED SILICON

被引：17
作者：
TASKIN, T
GARDELIS, S
EVANS, JH
HAMILTON, B
PEAKER, AR
机构：
[1] Centre for Electronic Materials, University of Manchester Institute of Science and Technology, Manchester, M60 1QD
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 24期
关键词：
LUMINESCENCE; POROUS SILICON;
D O I：
10.1049/el:19951439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sharp luminescence at 1.54 mu m from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.
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收藏
页码：2132 / 2133
页数：2
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