BISTABLE BEHAVIOR OF THE NEW SHALLOW THERMAL DONOR IN ALUMINUM-DOPED SILICON

被引：0
|
作者：
KACZOR, P [1 ]
GODLEWSKI, M [1 ]
GREGORKIEWICZ, T [1 ]
机构：
[1] UNIV AMSTERDAM,VAN DER WAALS ZEEMAN LAB,1018 XE AMSTERDAM,NETHERLANDS
来源：
ACTA PHYSICA POLONICA A | 1993年 / 84卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.84.555
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some hints for the origin of the metastability were given.
引用
收藏
页码：555 / 558
页数：4
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