OPTICAL TRISTABLE DEVICE BY VERTICAL AND DIRECT INTEGRATION OF HETEROJUNCTION PHOTOTRANSISTORS AND LASER-DIODES

被引：16
作者：
NODA, S
KOBAYASHI, Y
TAKAYAMA, T
SHIBATA, K
SASAKI, A
机构：
[1] Department of Electrical Engineering, Kyoto University, Kyoto
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 12期
关键词：
D O I：
10.1109/3.166464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A light-controlled optical tristable device with an optical gain is actualized. The device has a configuration of vertical and direct integration of two heterojunction phototransistors (HPT's) on a laser diode (LD) along the cavity direction. An external optical input causes a bistable operation in one HPT + LD part. With the optical connection between two HPT's through the LD stripe, a bistable operation also occurs in the other HPT + LD part. The light-controlled optical tristability is achieved with the combination of the bistable operation in each HPT + LD part.
引用
收藏
页码：2714 / 2720
页数：7
相关论文
共 26 条
[1]  
GIBBS HM, 1982, APPL PHYS LETT, V41, P221, DOI 10.1063/1.93490
[2]   MONOLITHIC INTEGRATION OF INGAASP/INP LED AND TRANSISTOR - A LIGHT-COUPLED BISTABLE ELECTRO-OPTICAL DEVICE [J].
GROTHE, H ;
PROEBSTER, W .
ELECTRONICS LETTERS, 1983, 19 (06) :194-196
[3]   BISTABILITY AND PULSATIONS IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS CURRENT INJECTION [J].
HARDER, C ;
LAU, KY ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (09) :1351-1361
[4]   BISTABILITY AND NEGATIVE-RESISTANCE IN SEMICONDUCTOR-LASERS [J].
HARDER, C ;
LAU, KY ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :124-126
[5]   OPTICAL TRISTABILITY IN 2-SECTION LASER DIODE [J].
IKEDA, M ;
OKU, S ;
OGASAWARA, M .
ELECTRONICS LETTERS, 1989, 25 (25) :1701-1702
[6]   WAVELENGTH DEPENDENCE OF CHARACTERISTICS OF 1.2-1.55 MU-M INGAASP/INP P-SUBSTRATE BURIED CRESCENT LASER-DIODES [J].
KAKIMOTO, S ;
TAKEMOTO, A ;
SAKAKIBARA, Y ;
NAKAJIMA, Y ;
FUJIWARA, M ;
NAMIZAKI, H ;
HIGUCHI, H ;
YAMAMOTO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (01) :29-35
[7]   DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCH AS A DYNAMIC MEMORY WITH LOW-POWER CONSUMPTION [J].
KASAHARA, K ;
TASHIRO, Y ;
HAMAO, N ;
SUGIMOTO, M ;
YANASE, T .
APPLIED PHYSICS LETTERS, 1988, 52 (09) :679-681
[8]   BISTABILITY AND DIFFERENTIAL GAIN IN SEMICONDUCTOR-LASERS [J].
KAWAGUCHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :371-376
[9]   OPTICAL INPUT AND OUTPUT CHARACTERISTICS FOR BISTABLE SEMICONDUCTOR-LASERS [J].
KAWAGUCHI, H .
APPLIED PHYSICS LETTERS, 1982, 41 (08) :702-704
[10]  
KOJIMA K, 1988, APPL PHYS LETT, V52
123