CHARACTERISTICS OF THE FORMATION AND ANNEALING OF RADIATION DEFECTS IN ZIRCONIUM-DOPED N-TYPE SILICON

被引：0
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作者：
KAZAKEVICH, LA
KUZNETSOV, VI
LUGAKOV, PF
SALMANOV, AR
PROKOFEVA, VK
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来源：
SEMICONDUCTORS | 1993年 / 27卷 / 03期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：301 / 302
页数：2
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