MOLECULAR LAYER EPITAXY

被引：289

作者：

NISHIZAWA, J ^{[1
]}

ABE, H ^{[1
]}

KURABAYASHI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 05期

关键词：

D O I：

10.1149/1.2114058

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1197 / 1200

页数：4

共 17 条

[1] STUDY OF ZNTE FILMS GROWN ON GLASS SUBSTRATES USING AN ATOMIC LAYER EVAPORATION METHOD [J].

AHONEN, M ;

PESSA, M ;

SUNTOLA, T .

THIN SOLID FILMS, 1980, 65 (03) :301-307

[2] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J].

BENEKING, H ;

ESCOBOSA, A ;

KRAUTLE, H .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :473-480

[3]

CHO AY, 1979, J VAC SCI TECHNOL, V16, P257

[4] EPITAXIAL GROWTH WITH LIGHT IRRADIATION [J].

KUMAGAWA, M ;

SUNAMI, H ;

TERASAKI, T ;

NISHIZAWA, JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) :1332-+

[5] RECENT PROGRESS AND POTENTIAL OF SIT [J].

NISHIZAWA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :3-11

[6]

NISHIZAWA J, 1980, C MICROWAVE SOLID ST, P28

[7]

NISHIZAWA J, 1984, 16 C SOL STAT DEV MA, P1

[8]

NISHIZAWA J, 1961, J METALL SOC JPN, V25, P177

[9]

NISHIZAWA J, 1961, J METALL SOC JPN, V25, P149

[10]

Nishizawa J. I., 1984, Oyo Buturi, V53, P516

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