Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density

被引：0

作者：

Gill, Fateh Singh ^{[1
]}

Gupta, Himanshu ^{[2
]}

Purohit, L. P. ^{[2
]}

Pal, Pankaj K.

Sharma, Kiran ^{[1
]}

Dhiman, Neeraj ^{[1
]}

Kumar, R. ^{[2
]}

Mehra, R. M. ^{[3
]}

机构：

[1] Graph Era Univ, Clement Town, Dehradun, India

[2] Gurukula Kangri Univ, Dept Phys, Haridwar 249401, India

[3] Sharda Univ, Sch Engn & Technol, Greater Noida 201306, India

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2013年 / 5卷 / 01期

关键词：

Photoluminescence; Quantum dots; Nanoparticles;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The paper presents a study on a series of porous silicon films of various thicknesses, prepared at 20 mA current density using a photoluminescence fitting model to determine the average crystallite size of spherical shaped interconnected silicon quantum dots. Discrepancy in photoluminescence behavior of the samples is well explained with this model.

引用

页数：3

共 7 条

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