DIRECT OBSERVATION OF DISLOCATIONS IN A LEC-GAP CRYSTAL BY LIGHT-SCATTERING METHOD

被引：30

作者：

TAJIMA, M

IIZUKA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 04期

关键词：

D O I：

10.1143/JJAP.15.651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：651 / 654

页数：4

共 17 条

[1]

AMELINCKS S, 1964, DIRECT OBSERVATION D, P55

[2]

Guseva I. N., 1968, Journal of Crystal Growth, V3-4Spe, P723, DOI 10.1016/0022-0248(68)90253-4

[3] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES [J].

HACKETT, WH ;

SAUL, RH ;

VERLEUR, HW ;

BASS, SJ .

APPLIED PHYSICS LETTERS, 1970, 16 (12) :477-&

[4] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS [J].

IIZUKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1190-&

[5] RED PHOTOLUMINESCENT EFFICIENCY AND MINORITY-CARRIER LIFETIME OF GAP(ZN,O) PULLED FROM NONSTOICHIOMETRIC MELTS [J].

JORDAN, AS ;

NEIDA, ARV ;

CARUSO, R ;

DIDOMENICO, M .

APPLIED PHYSICS LETTERS, 1971, 19 (10) :394-+

[6] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[7] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J].

KANEKO, K ;

AYABE, M ;

DOSEN, M ;

MORIZANE, K ;

USUI, S ;

WATANABE, N .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :884-890

[8] COMPARISON OF LIQUID-ENCAPSULATED AND SOLUTION-GROWN SUBSTRATES FOR EFFICIENT GAP DIODES [J].

LADANY, I ;

MCFARLANE, SH ;

BASS, SJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4984-+

[9] PROPERTIES OF GAP SINGLE CRYSTALS GROWN BY LIQUID ENCAPSULATED PULLING [J].

NYGREN, SF ;

RINGEL, CM ;

VERLEUR, HW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :306-&

[10] ETCH PITS IN GALLIUM ARSENIDE [J].

RICHARDS, JL ;

CROCKER, AJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) :611-612

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