A 62-GHZ MONOLITHIC INP-BASED HBT VCO

被引：24

作者：

WANG, H

CHANG, KW

LO, DCW

TRAN, LT

COWLES, JC

BLOCK, TR

DOW, GS

OKI, A

STREIT, DC

ALLEN, BR

机构：

[1] Electronic Systems and Technology Division TRW, Redondo Beach

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 11期

关键词：

Center frequency - Monolithic v-band oscillators - Peak output power - Phase noise;

D O I：

10.1109/75.473533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic V-band VCO using M-based HBT technology has been designed, fabricated, and tested. This VCO delivers a peak output power of 4 dBm at a center frequency of 62.4 GHz with a tuning range of 300 MHz. The measured phase noise shows -78 dBc/Hz at 100 kHz offset and -104 dBc/Hz at 1 MHz offset. To our knowledge, this is the highest frequency fundamental-mode oscillator ever reported using bipolar transistors.

引用

页码：388 / 390

页数：3

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