ROOM-TEMPERATURE OF A GAINASP-INP DOUBLE-HETEROSTRUCTURE LASER GROWN BY LOW-PRESSURE METALLORGANIC CHEMICAL-VAPOR DEPOSITION

被引：0

作者：

HIRTZ, JP ^{[1
]}

DUCHEMIN, JP ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期

关键词：

D O I：

10.1109/T-ED.1980.20216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：2191 / 2191

页数：1

相关论文

共 5 条

[1] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS
DUCHEMIN, JP
BONNET, M
KOELSCH, F
HUYGHE, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149
[2] DUCHEMIN JP, 1978, I PHYS C SER, V45, P10
[3] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[4] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 406 - 407
[5] HIRTZ JP, UNPUBLISHED