ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS

[1] Chalmers B., 1964, PRINCIPLES SOLIDIFIC

[2] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[3] DECONVOLUTION METHOD FOR COMPOSITION PROFILING BY AUGER SPUTTERING TECHNIQUE [J]. SURFACE SCIENCE, 1976, 55 (01) : 335 - 348

[4] ELECTRON-MICROSCOPY STUDIES OF ALLOYING BEHAVIOR OF AU ON GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02): : 695 - 700

[5] OGAWA M, UNPUBLISHED

[6] OHATA K, 1974, 12TH ANN P IEEE REL, P278

[7] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 541 - 550

[8] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 331 - &

[9] VARIATION OF SCHOTTKY-BARRIER ENERGY WITH INTERDIFFUSION IN AU AND NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 884 - 887

[10] INVESTIGATION OF AU-GE-NI SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 433 - &

[1] Chalmers B., 1964, PRINCIPLES SOLIDIFIC

[2] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[3] DECONVOLUTION METHOD FOR COMPOSITION PROFILING BY AUGER SPUTTERING TECHNIQUE [J]. SURFACE SCIENCE, 1976, 55 (01) : 335 - 348

[4] ELECTRON-MICROSCOPY STUDIES OF ALLOYING BEHAVIOR OF AU ON GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02): : 695 - 700

[5] OGAWA M, UNPUBLISHED

[6] OHATA K, 1974, 12TH ANN P IEEE REL, P278

[7] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 541 - 550

[8] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 331 - &

[9] VARIATION OF SCHOTTKY-BARRIER ENERGY WITH INTERDIFFUSION IN AU AND NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 884 - 887

[10] INVESTIGATION OF AU-GE-NI SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 433 - &