A FUNDAMENTAL LIMITATION FOR BIPOLAR-TRANSISTOR SCALING

被引：3

作者：

PAN, Y

机构：

[1] Department of Electrical Engineering, Electrical Materials Laboratory, Delft University of Technology, Delft, Mekelweg 4

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 10期

关键词：

D O I：

10.1109/55.62991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microscopic model of minority-carrier diffusion in a heavily doped emitter is proposed. Monte Carlo simulation demonstrates that statistical fluctuation in the base current is one of the fundamental limitations in high-speed applications of scaled bipolar transistors. © 1990 IEEE

引用

页码：445 / 447

页数：3

共 7 条

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