NEW ELECTRONIC-PROPERTIES OF METAL/III-V COMPOUND SEMICONDUCTOR INTERFACES

被引：1
作者：
BRILLSON, LJ
VITURRO, RE
CHANG, S
SHAW, JL
MAILHIOT, C
ZANONI, R
HWU, Y
MARGARITONDO, G
KIRCHNER, P
WOODALL, JM
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-103
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：103 / 115
页数：13
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