HOPPING PHOTOCONDUCTIVITY OF HEAVILY DOPED COMPENSATED SEMICONDUCTORS

被引：0

作者：

VYURKOV, VV

RYZHII, VI

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：787 / 790

页数：4

共 50 条

[41] THEORY OF LUMINESCENCE OF HEAVILY DOPED SEMICONDUCTORS
LEVANYUK, AP
OSIPOV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 721 - 726
[42] SCATTERING OF ELECTRONS IN HEAVILY DOPED SEMICONDUCTORS
KUROSAWA, T
MATSUI, M
SASAKI, W
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (05) : 1622 - 1631
[43] DEBYE TEMPERATURE OF HEAVILY DOPED SEMICONDUCTORS
BEILIN, VM
VEKILOV, YK
KRASILNI.OM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1201 - &
[44] ELECTRON SHIELDING IN HEAVILY DOPED SEMICONDUCTORS
KRIEGER, JB
PHYSICAL REVIEW, 1969, 178 (03): : 1337 - &
[45] OPTICAL MAGNETOABSORPTION IN HEAVILY DOPED SEMICONDUCTORS
VANCONG, H
PHILOSOPHICAL MAGAZINE, 1973, 28 (05): : 983 - 991
[46] SOLUBILITY INTERACTIONS IN COMPENSATED HEAVILY DOPED GERMANIUM
MCCALDIN, JO
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 211 - &
[47] THEORY OF ELECTROLUMINESCENCE OF HEAVILY DOPED SEMICONDUCTORS
OSIPOV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1405 - 1409
[48] INTERBAND ABSORPTION IN HEAVILY DOPED SEMICONDUCTORS
TSITSISH.EG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 70 - +
[49] HOPPING CONDUCTION IN LIGHTLY DOPED SEMICONDUCTORS
SHKLOVSKII, BI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1053 - 1075
[50] HOPPING CONDUCTION IN INTERMEDIATELY DOPED SEMICONDUCTORS
DVURECHENSKII, AV
DRAVIN, VA
YAKIMOV, AI
FIZIKA TVERDOGO TELA, 1988, 30 (02): : 401 - 406