PROTON-ENHANCED DIFFUSION AND VACANCY MIGRATION IN SILICON

被引：61
作者：
MASTERS, BJ
GOREY, EF
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期
关键词：
D O I：
10.1063/1.325193
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2717 / 2724
页数：8
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