CHARACTERIZATION OF BORON-IMPLANTED, LASER-ANNEALED SILICON

被引：0
|
作者：
YOUNG, RT
WHITE, CW
NARAYAN, J
CLARK, GJ
CHRISTIE, WH
机构：
[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
[2] OAK RIDGE NATL LAB,DIV ANALYT CHEM,OAK RIDGE,TN 37830
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C138 / C138
页数：1
相关论文
共 50 条
  • [1] UNIDIRECTIONAL CONTRACTION IN BORON-IMPLANTED LASER-ANNEALED SILICON
    LARSON, BC
    WHITE, CW
    APPLETON, BR
    APPLIED PHYSICS LETTERS, 1978, 32 (12) : 801 - 803
  • [2] INFRARED REFLECTIVITY AND TRANSMISSIVITY OF BORON-IMPLANTED, LASER-ANNEALED SILICON
    ENGSTROM, H
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5245 - 5249
  • [3] RAMAN-SCATTERING FROM BORON-IMPLANTED LASER-ANNEALED SILICON
    ENGSTROM, H
    BATES, JB
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2921 - 2925
  • [4] DECHANNELING CAUSED BY UNIDIRECTIONAL CONTRACTION IN BORON IMPLANTED LASER-ANNEALED SILICON
    VOS, M
    BOERMA, DO
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 340 - 344
  • [5] LASER ANNEALING OF BORON-IMPLANTED SILICON
    YOUNG, RT
    WHITE, CW
    CLARK, GJ
    NARAYAN, J
    CHRISTIE, WH
    MURAKAMI, M
    KING, PW
    KRAMER, SD
    APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141
  • [6] RAMAN-SCATTERING FROM BORON-IMPLANTED LASER ANNEALED SILICON - COMMENTS
    FORMAN, RA
    BELL, MI
    MYERS, DR
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4337 - 4339
  • [7] Laser-annealed, implanted boron emitters for B-BSF silicon solar cells
    Paviet-Salomon, B.
    Lerat, J. F.
    Lanterne, A.
    Emeraud, T.
    Gall, S.
    Slaoui, A.
    PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012), 2012, 27 : 474 - 479
  • [8] LASER-ANNEALED IMPLANTED TRANSISTORS
    SEIDEL, TE
    PARRILLO, LC
    MELONE, TG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C138 - C138
  • [9] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED LASER-ANNEALED SILICON
    YOUNG, RT
    NARAYAN, J
    WHITE, CW
    WOOD, RF
    CLELAND, JW
    WESTBROOK, RD
    MOONEY, PM
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 41 - 44
  • [10] PROPERTIES OF LASER-ANNEALED AND THERMALLY-ANNEALED ARSENIC-IMPLANTED SILICON
    LIU, SH
    LU, WX
    JI, CZ
    ZHANG, TH
    CHINESE PHYSICS, 1981, 1 (03): : 698 - 701
12345