HIGH-CURRENT PULSE-DOPED GAINAS MESFET

被引：2
作者：
FATHIMULLA, A
HIER, H
ABRAHAMS, J
机构：
[1] Allied-Signal Aerospace Co,, Columbia, MD, USA, Allied-Signal Aerospace Co, Columbia, MD, USA
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 08期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS - Applications - TRANSISTORS; FIELD EFFECT - Performance;
D O I：
10.1049/el:19880338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the DC and microwave performance of pulse-doped GaInAs power MESFETs. For a 0. 7 mu m gate-length device, a maximum drain-current density of 870 mA/mm and a peak transconductance of 325 mS/mm were measured. A maximum stable gain of 11. 7 dB at 26 GHz, and an extrapolated f//t of 33 GHz were obtained. These values are the highest reported for MESFETs having gates as long as 0. 7 mu m.
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页码：498 / 499
页数：2
相关论文
共 6 条
[1]   MICROWAVE PERFORMANCE OF PULSE-DOPED-HETEROSTRUCTURE GAINAS MESFETS [J].
FATHIMULLA, A ;
HIER, H ;
ABRAHAMS, J .
ELECTRONICS LETTERS, 1988, 24 (02) :93-94
[2]  
GUPTA AK, 1985, JUN IEEE MICR MILL W, P50
[3]   A 30-GHZ 1-W POWER HEMT [J].
HIKOSAKA, K ;
HIDAKA, N ;
HIRACHI, Y ;
ABE, M .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :521-523
[4]   HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMTS [J].
MISHRA, UK ;
BROWN, AS ;
JELLOIAN, LM ;
HACKETT, LH ;
DELANEY, MJ .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :41-43
[5]   HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J].
SAUNIER, P ;
LEE, JW .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :503-505
[6]   A HIGH-CURRENT PSEUDOMORPHIC ALGAAS/INGAAS DOUBLE QUANTUM-WELL MODFET [J].
WANG, GW ;
CHEN, YK ;
RADULESCU, DC ;
EASTMAN, LF .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :4-6
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