MILLIMETER-WAVE PERFORMANCE OF ULTRASUBMICROMETER-GATE FIELD-EFFECT TRANSISTORS - A COMPARISON OF MODFET, MESFET, AND PBT STRUCTURES

被引：39
作者：
DAS, MB
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 07期
关键词：
D O I：
10.1109/T-ED.1987.23103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1429 / 1440
页数：12
相关论文
共 50 条
  • [31] High-performance short-gate InAIN/GaN heterostructure field-effect transistors
    Higashiwaki, Masataka
    Mimura, Takashi
    Matsui, Toshiaki
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (29-32): : L843 - L845
  • [32] A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors
    Zhao, Jingtao
    Lin, Zhaojun
    Chen, Quanyou
    Yang, Ming
    Cui, Peng
    Lv, Yuanjie
    Feng, Zhihong
    APPLIED PHYSICS LETTERS, 2015, 107 (11)
  • [33] Design and fabrication of high-performance diamond triple-gate field-effect transistors
    Liu, Jiangwei
    Ohsato, Hirotaka
    Wang, Xi
    Liao, Meiyong
    Koide, Yasuo
    SCIENTIFIC REPORTS, 2016, 6
  • [34] High performance horizontal gate-all-around silicon nanowire field-effect transistors
    Shirak, O.
    Shtempluck, O.
    Kotchtakov, V.
    Bahir, G.
    Yaish, Y. E.
    NANOTECHNOLOGY, 2012, 23 (39)
  • [35] Performance Comparison of Single- and Dual-Gate Carbon-Nanotube Thin-Film Field-Effect Transistors
    Narasimhamurthy, K. C.
    Paily, Roy
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (07) : 1922 - 1927
  • [36] Heterostructure field-effect transistors (HFET's): Structures, electronic parameters, performance and limits
    Das, MB
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 461 - 466
  • [37] (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
    Maroldt, Stephan
    Quay, Ruediger
    Dennler, Philippe
    Schwantuschke, Dirk
    Musser, Markus
    Dammann, Michael
    Aidam, Rolf
    Waltereit, Patrick
    Tessmann, Axel
    Ambacher, Oliver
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [38] MILLIMETER-WAVE OPERATION OF A 20 MICRONS LONG FIELD-EFFECT CONTROLLED TRANSFERRED-ELECTRON DEVICE (FECTED)
    KUCH, R
    LUBKE, K
    THIM, H
    CHABICOVSKY, R
    LINDNER, G
    HAYDL, W
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 439 - 444
  • [39] EFFECT OF THERMAL INSTABILITY ON ULTRA-HIGH FREQUENCY PERFORMANCE OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
    KANO, K
    KUNIG, H
    SOLID-STATE ELECTRONICS, 1969, 12 (09) : 719 - &
  • [40] A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect
    Guan, Yunhe
    Dou, Zhen
    Lu, Jiachen
    Sun, Weihan
    Wang, Shaoqing
    Liu, Xiangtai
    Chen, Haifeng
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (06) : 4635 - 4642
12345