MILLIMETER-WAVE PERFORMANCE OF ULTRASUBMICROMETER-GATE FIELD-EFFECT TRANSISTORS - A COMPARISON OF MODFET, MESFET, AND PBT STRUCTURES

被引：39
作者：
DAS, MB
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 07期
关键词：
D O I：
10.1109/T-ED.1987.23103
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1429 / 1440
页数：12
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