SUBPICOSECOND GAIN DYNAMICS IN GAALAS LASER-DIODES

被引:154
作者
KESLER, MP [1 ]
IPPEN, EP [1 ]
机构
[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.98515
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1765 / 1767
页数:3
相关论文
共 24 条
[3]  
AGRAWAL GP, 1985, ELECTRON LETT, V22, P1087
[4]   DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].
ASADA, M ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :434-442
[5]   HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE [J].
BOWERS, JE .
SOLID-STATE ELECTRONICS, 1987, 30 (01) :1-11
[6]  
CALI C, 1983, 2ND P EUR C INT OPT
[7]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P164
[8]   SPACE COHERENT OPTICAL COMMUNICATION-SYSTEMS - AN INTRODUCTION [J].
CHAN, VWS .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (04) :633-637
[9]   EFFECT OF GAIN SATURATION ON INJECTION-LASER SWITCHING [J].
CHANNIN, DJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :3858-3860
[10]   PICOSECOND MEASUREMENT OF SPONTANEOUS AND STIMULATED-EMISSION FROM INJECTION-LASERS [J].
DUGUAY, MA ;
DAMEN, TC .
APPLIED PHYSICS LETTERS, 1982, 40 (08) :667-669