RADIOGENIC SN DEFECTS IN ION-IMPLANTED CDTE

被引：6
|
作者：
GRANN, H [1 ]
PEDERSEN, FT [1 ]
WEYER, G [1 ]
机构：
[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND
来源：
HYPERFINE INTERACTIONS | 1986年 / 29卷 / 1-4期
关键词：
D O I：
10.1007/BF02399458
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
引用
收藏
页码：1237 / 1240
页数：4
相关论文
共 50 条
  • [41] LUMINESCENCE SPECTRA OF DEFECTS IN ION-IMPLANTED SILICON-CARBIDE
    KODRAU, NV
    MAKAROV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 813 - 814
  • [42] PRIMARY DEFECTS IN LOW-FLUENCE ION-IMPLANTED SILICON
    WANG, KL
    APPLIED PHYSICS LETTERS, 1980, 36 (01) : 48 - 50
  • [43] TRAPPING OF DEUTERIUM BY HELIUM BUBBLES AND DEFECTS IN ION-IMPLANTED TANTALUM
    LEE, SR
    MYERS, SM
    SPULAK, RG
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) : 1137 - 1148
  • [44] Annealing of ion-implanted defects in diamond by MeV ion-beam irradiation
    Nakata, J
    PHYSICAL REVIEW B, 1999, 60 (04): : 2747 - 2761
  • [45] RADIOGENIC SN IMPURITY DEFECTS IN GERMANIUM
    DAMGAARD, S
    OLESEN, AFF
    PETERSEN, JW
    WEYER, G
    PHYSICA SCRIPTA, 1980, 22 (06): : 640 - 646
  • [46] LATTICE LOCATION AND ELECTRICAL-ACTIVITY OF ION-IMPLANTED SN IN INP
    KRINGHOJ, P
    WEYER, G
    APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1973 - 1975
  • [47] DEFECTS CREATED IN ION-IMPLANTED GA1-XALXAS ALLOYS
    SELA, I
    BESERMAN, R
    MORKOC, H
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2316 - 2320
  • [48] NATURE AND HABIT PLANES OF DEFECTS IN P+ ION-IMPLANTED SILICON
    SESHAN, K
    WASHBURN, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01): : 345 - 352
  • [49] Defects in ion-implanted crystalline silicon probed by femtosecond laser spectroscopy
    Calcagnile, L
    Stolk, PA
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1996, 18 (05): : 595 - 603
  • [50] Impact of MeV Ni Ion-Implanted Defects in Band Modification of MgO
    Bhakta, Sourav
    Pradhan, Subhadip
    Nandy, Ashis K.
    Sahoo, Pratap K.
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (03) : 1937 - 1947
12345