共 50 条
- [21] Investigation of defects in reactive ion-implanted silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (1-2): : 75 - 80
- [24] LATTICE-DEFECTS IN ION-IMPLANTED GAAS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 150 (01): : 239 - 245
- [26] INTERSTITIAL TYPE DEFECTS IN ION-IMPLANTED SILICON PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (02): : K121 - K125
- [29] PRODUCTION AND REARRANGEMENT OF RADIATION DEFECTS IN ION-IMPLANTED SEMICONDUCTORS RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (3-4): : 173 - 178
- [30] THE STRUCTURE AND FORMATION OF ROD DEFECTS IN ION-IMPLANTED SILICON PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (05): : 1043 - 1052