FLASH CHROMIUM INTERLAYER FOR HIGH-PERFORMANCE DISKS WITH SUPERIOR NOISE AND COERCIVITY SQUARENESS

被引：6
|
作者：
TENG, E
ELTOUKHY, A
机构：
[1] Nashua Corp., Santa Clara, CA 95050
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1993年 / 29卷 / 06期
关键词：
D O I：
10.1109/20.281267
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A special cathode was designed to sputter flash chrome interlayer (0.5-1.5nm) between CoCrPt magnetic layers. Disk with such a laminated structure have been manufactured in a high volume in-line sputtering system. They have consistently enhibited excellent PW50, overwrite, and signal to noise ratio (SNR). In addition, the chrome interlayer improved the disk anisotropy with less coercivity variation around the disk. High resolution TEM cross section micrograph and X-ray diffraction (XRD) were used to examine film microstructure and crystallographic orientation. A special film growth mechanism is proposed to interpret the magnetic and parametric performance of disks with flash Cr interlayer.
引用
收藏
页码：3679 / 3681
页数：3
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