SURFACE INTERMEDIATES OF AN N-TYPE GALLIUM-PHOSPHIDE ELECTRODE AS RELATED WITH THE SHIFTS OF THE SURFACE BAND ENERGY INDUCED BY OXIDANTS IN SOLUTION

被引:31
作者
NAKATO, Y
TSUMURA, A
TSUBOMURA, H
机构
关键词
D O I
10.1149/1.2127624
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1300 / 1304
页数:5
相关论文
共 50 条
  • [31] WATER-VAPOR-INDUCED N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
    KINGSTON, RH
    PHYSICAL REVIEW, 1955, 98 (06): : 1766 - 1775
  • [32] THEORETICAL-ANALYSIS OF EEL SPECTRA FROM AN N-TYPE GAAS SURFACE WITH A BAND BENDING
    INAOKA, T
    CHIHARA, T
    SURFACE SCIENCE, 1989, 208 (1-2) : 71 - 92
  • [33] EFFECT OF NONPARABOLIC BAND-STRUCTURE ON AMPLIFICATION OF SURFACE PHONONS IN N-TYPE INSB FILMS
    WU, CC
    TSAI, JS
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (23): : 4939 - 4950
  • [34] SURFACE BAND ENERGY SHIFTS OF A P-TYPE SI ELECTRODE IN THE PRESENCE OF REDOX COUPLES - STUDY OF ANTHRAQUINONE DERIVATIVES IN THE DARK AND UNDER ILLUMINATION
    KEITA, B
    KAWENOKI, I
    KOSSANYI, J
    GARREAU, D
    NADJO, L
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 145 (02): : 293 - 309
  • [35] PHOTOLUMINESCENCE INTENSITY AND SURFACE RECOMBINATION VELOCITY AT N-TYPE INP AQUEOUS-SOLUTION INTERFACE
    YAMAMOTO, A
    OHKUBO, M
    ASADA, Y
    HASHIMOTO, A
    DENKI KAGAKU, 1993, 61 (07): : 885 - 886
  • [36] Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution
    Huh, C
    Kim, SW
    Kim, HS
    Lee, IH
    Park, SJ
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4591 - 4593
  • [37] ALUMINUM-INDUCED AC SURFACE PHOTOVOLTAGES IN N-TYPE SILICON-WAFERS
    MUNAKATA, C
    SHIMIZU, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (09) : 991 - 993
  • [38] Effects of rapid thermal annealing treatment on the surface band bending of n-type GaN studied by surface potential electric force microscopy
    Chevtchenko, S.
    Fan, Q.
    Litton, C. W.
    Baski, A. A.
    Morkoc, H.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 1529 - 1532
  • [39] Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon
    Mitchell, Jonathon
    Macdonald, Daniel
    Cuevas, Andres
    APPLIED PHYSICS LETTERS, 2009, 94 (16)
  • [40] p–n Structure Formed on the Surface of n-type GaAs by Low-Energy Ar+ Ions
    E. A. Makarevskaya
    D. A. Novikov
    V. M. Mikoushkin
    V. S. Kalinovskii
    E. V. Kontrosh
    I. A. Tolkachev
    K. K. Prudchenko
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, 16 : 890 - 895