SURFACE INTERMEDIATES OF AN N-TYPE GALLIUM-PHOSPHIDE ELECTRODE AS RELATED WITH THE SHIFTS OF THE SURFACE BAND ENERGY INDUCED BY OXIDANTS IN SOLUTION

被引:31
作者
NAKATO, Y
TSUMURA, A
TSUBOMURA, H
机构
关键词
D O I
10.1149/1.2127624
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1300 / 1304
页数:5
相关论文
共 50 条
  • [11] INSITU PHOTOLUMINESCENCE STUDIES OF N-TYPE GALLIUM-PHOSPHIDE SEMICONDUCTOR ELECTRODES - INTERMEDIATES AND MECHANISM OF PHOTOANODIC ELECTRON-TRANSFER REACTIONS
    NAKATO, Y
    MORITA, K
    TSUBOMURA, H
    JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (12) : 2718 - 2723
  • [12] DEEP-STATE-CONTROLLED MINORITY-CARRIER LIFETIME IN N-TYPE GALLIUM-PHOSPHIDE
    HAMILTON, B
    PEAKER, AR
    WIGHT, DR
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6373 - 6385
  • [13] ANOMALOUS POLARIZATION DEPENDENCE OF PHOTON DRAG AND OPTICAL RECTIFICATION FIELDS IN N-TYPE GALLIUM-PHOSPHIDE
    GATENBY, PV
    KAR, AK
    OPTICAL AND QUANTUM ELECTRONICS, 1978, 10 (02) : 153 - 161
  • [14] SURFACE MEASUREMENTS ON N-TYPE GALLIUM ARSENIDE
    FLINN, I
    EMMONY, DC
    PHYSICS LETTERS, 1963, 6 (02): : 133 - 135
  • [15] THE ROLE OF OXYGEN IN INCREASING THE CARRIER CONCENTRATION OF N-TYPE SILICON-GERMANIUM GALLIUM-PHOSPHIDE ALLOYS
    ROWE, DM
    MIN, G
    CHEN, YA
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (01) : 182 - 184
  • [16] ABSORPTION OF INFRARED RADIATION IN N-TYPE GALLIUM PHOSPHIDE .3. STRUCTURE OF CONDUCTION BAND
    SHMARTSEV, YV
    REMENYUK, AD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1425 - +
  • [17] ION-BOMBARDMENT INDUCED CHANGES IN THE SURFACE-TOPOGRAPHY OF MBE-GROWN SILICON ON GALLIUM-PHOSPHIDE
    BOUDEWIJN, PR
    AKERBOOM, HWP
    BULLELIEUWMA, CWT
    HAISMA, J
    SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 49 - 52
  • [18] SURFACE-STATES FORMATION DUE TO IMPREGNATED HYDROGEN AT PARA-TYPE GALLIUM-PHOSPHIDE ELECTRODES WITH METAL ADATOMS
    UCHIDA, H
    YONEYAMA, H
    TAMURA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 99 - 104
  • [19] Electrochemical Nucleation of Au on n-Type Semiconductor Silicon Electrode Surface
    Wu Xiao-Ying
    Yang Li-Kun
    Yan Hui
    Yang Fang-Zu
    Tian Zhong-Qun
    Zhou Shao-Min
    ACTA PHYSICO-CHIMICA SINICA, 2015, 31 (09) : 1708 - 1714
  • [20] Commensurate magnetic excitations induced by band splitting and Fermi surface topology in n-type cuprates
    Zhang, H. Y.
    Zhou, Y.
    Lin, H. Q.
    Gong, C. D.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (15)