Steady state electrical-thermal coupling analysis of TSV

被引：1

作者：

Chai, Jingrui ^{[1
]}

Dong, Gang ^{[1
]}

Mei, Zheng ^{[1
]}

Zhu, Weijun ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 09期

基金：

中国国家自然科学基金;

关键词：

through-silicon-via (TSV); electrical-thermal coupling; temperature; iterative;

D O I：

10.1088/1674-4926/39/9/095001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper presents a blended analytical electrical-thermal model for steady state thermal analysis of through-silicon-via (TSV) in three-dimensional (3D) integrated circuits. The proposed analytical model is validated by the commercial FEM tool-COMSOL. The comparison between the results of the proposed analytical formulas and COMSOL shows that the proposed formulas have very high accuracy with a maximum error of 0.1%. Based on the analytical model, the temperature performance of TSV is studied. Design guide lines of TSV are also given as: (1) the radius of the TSV increases, the resistance decreases and the temperature can be increased; (2) the thicker the dielectric layer, the higher the temperature; (3) compared with carbon nanotube, the Cu enlarges the temperature by 34 K, and the W case enlarges the temperature by 41 K.

引用

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