CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER

被引：44

作者：

SAH, CT

FU, HS

机构：

[1] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 14卷 / 01期

关键词：

D O I：

10.1002/pssa.2210140105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：59 / 70

页数：12

共 17 条

[1] CURRENT DUE TO RECOMBINATION VIA MULTILEVEL CENTERS IN THE SPACE-CHARGE LAYER OF A P-N STRUCTURE
EVSTROPOV, VV
KISELEV, KV
PETROVICH, IL
TSARENKOV, BV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1156 - 1159
[2] CURRENT DUE TO RECOMBINATION AT CENTERS CARRYING FIVEFOLD CHARGE IN THE SPACE-CHARGE LAYER OF GAAS AIAS P-N STRUCTURES
EVSTROPOV, VV
PETROVICH, IL
TSARENKOV, BV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1250 - 1254
[3] PHYSICAL INTERPRETATION OF NOISE-REDUCTION FOR GENERATION-RECOMBINATION CURRENT DUE TO SRH CENTERS IN SPACE-CHARGE LAYER
VANVLIET, KM
VANDERZIEL, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1127 - 1129
[4] TRANSIENT PHOTO-EMF DUE TO IONIZATION OF IMPURITY CENTERS IN A SPACE-CHARGE LAYER
KOTINA, IM
NOVIKOV, SR
MAZURIK, NE
KHUSAINO.AK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 362 - &
[5] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .1. GENERAL THEORY AND APPLICATIONS TO INITIALLY DEPLETED SURFACE WITHOUT SURFACE STATE
SAH, CT
FU, HS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01): : 297 - +
[6] MODELING BULK AND SURFACE RECOMBINATION IN THE SIDEWALL SPACE-CHARGE LAYER OF AN EMITTER-BASE JUNCTION
ROULSTON, DJ
ELTOUKHY, AA
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (05): : 205 - 209
[7] THERMALLY STIMULATED CURRENT AND CAPACITANCE OF STRUCTURES WHICH HAVE A SPACE-CHARGE REGION AND CONTAIN MULTILEVEL DEEP CENTERS
BULYARSKII, SV
STRATAN, IV
GRUSHKO, NS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (09): : 1047 - 1048
[8] NOISE AND ADMITTANCE OF GENERATION-RECOMBINATION CURRENT INVOLVING SRH CENTERS IN SPACE-CHARGE REGION OF JUNCTION DEVICES
VANVLIET, KM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1236 - 1246
[9] THEORY OF SPACE-CHARGE BUILDUP AND CURRENT TRANSIENT IN A WEAKLY CONDUCTING LAYER WITH AN INDUCED CONDUCTIVITY GRADIENT - APPLICATION TO PHOTOCONDUCTION AND THERMOSTIMULATED CURRENT ANALYSIS
COELHO, R
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02): : 563 - 577
[10] ELECTRONIC-PROPERTIES OF THE SPACE-CHARGE LAYER OF THE CLEAN SNO2(110) SURFACE
SZUBER, J
PIWOWARCZYK, M
VACUUM, 1994, 45 (2-3) : 215 - 217

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