CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER

被引：44
作者：
SAH, CT
FU, HS
机构：
[1] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 14卷 / 01期
关键词：
D O I：
10.1002/pssa.2210140105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：59 / 70
页数：12
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